features ultra low rds(on) provides higher efficiency and extends battery life logic level gate drive ? can be driven by logic ics diode is characterized for use in bridge circuits diode exhibits high speed, with soft recovery i dss specified at elevated temperature avalanche energy specified absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain-source voltage v dss v gate-source voltage v gss v drain current continuous i d 4.1 3 a drain current pulsed *1 i dm 21 15 a operating and storage temperature range t j ,t stg total power dissipation p d w thermal resistance ? junction to ambient r ja /w single pulse drain?to?source avalanche energy - starting t j =25 *1 pw 10 s, duty cycle 1% *2 v dd =30v,v gs = 5.0 v, peak i l = 9.0,apk, l = 8.0 mh, r g =25 *3 v dd =30v,v gs = 5.0 v, peak i l = 6.0,apk, l = 18 mh, r g =25 mj 30 20 -55to150 e as 324 *2 324 *3 2 62.5 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com smd type ic smd type KMDF2C03HD ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 100 p-ch 100 n-ch 30 p-ch 30 n-ch 1 p-ch 1 n-ch 1.0 1.7 3.0 p-ch 1.0 1.5 2.0 i d =3.0a,v gs =10a 0.06 0.070 i d =1.5a,v gs =4.5v 0.17 0.200 i d =2.0a,v gs =10v 0.065 0.075 i d =1.0a,v gs =4.5v 0.225 0.300 i d =1.5a,v ds =3.0v n-ch 2.0 3.6 i d =1.0a,v ds =3v p-ch 2.0 3.4 n-channel n-ch 450 630 v ds =24v,v gs =0v,f=1mhz p-ch 397 550 n-ch 160 225 p-channel p-ch 189 250 v ds =24v,v gs =0v,f=1mhz n-ch 35 70 p-ch 64 126 i d =3.0a,v dd =15v n-ch 12 24 i d =2.0a,v dd =-15v p-ch 16 32 n-channel n-ch 65 130 v gs =4.5v,r g =9.1 p-ch 18 36 n-ch 16 32 p-channel p-ch 63 126 v gs =4.5v,,r g =6.0 n-ch 19 38 p-ch 194 390 i d =3.0a,v dd =15v n-ch 8.0 16 i d =2.0a,v dd =-15v p-ch 9.0 18 n-channel n-ch 15 30 v gs =10v,r g =9.1 p-ch 10 20 n-ch 30 60 p-channel p-ch 81 162 v gs =10v,,r g =6.0 n-ch 23 46 p-ch 192 384 n-channel n-ch 11.5 16 v ds =10v,i d =3.0a,v gs =10 v p-ch 14.2 19 n-ch 1.5 p-channel p-ch 1.1 v ds =24v,i d =2.0a,v gs =10v n-ch 3.5 p-ch 4.5 n-ch 2.8 p-ch 3.5 pf ns ns ns ns t f fall time *1 testconditons n-ch p-ch i d =250 a,v gs =0v v ds =30v,v gs =0v tr rise time *1 t d (off) turn-off delay time *1 t f fall time *1 t d (on) turn-on delay time *1 r ds (on) static drain-source on-state resistance *1 t d (off) turn-off delay time *1 c rss reverse transfer capacitance c iss input capacitance t d (on) turn-on delay time tr rise time pf pf c oss output capacitance r ds (on) static drain-source on-state resistance *1 g fs forward transconductance i dss zero gate voltage drain current v gs (th) i gss gate-source leakage v (br) dss drain-source breakdown voltage gate threshold voltage *1 v gs = 20v,v ds =0v v ds =v gs ,i d = 250 a ns ns s na v a v ns ns q 3 gate?source charge *2 gate?drain charge *2 nc q t total gate charge *2 q 1 q 2 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com smd type ic smd type KMDF2C03HD ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type electrical characteristics ta = 25 parameter symbol min typ max unit i s =3.0 a,v gs =0v n-ch 0.82 1.2 i s =2.0 a,v gs =0 v p-ch 1.82 2 n-ch 24 p-ch 42 n-ch 17 p-ch 16 n-ch 7 p-ch 26 n-ch 0.025 p-ch 0.043 *1 pulse test: pulse width 3 300 s, duty cycle 2%. *2 switching characteristics are independent of operating junction temperature. testconditons v ns forward voltage *1 v sd t rr t a c i f =i s ,d is /d t = 100 a/ s t b reverse recovery time q rr reverse recovery storage charge KMDF2C03HD ic 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
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